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Wednesday, October 21
R22 Reverse-Offset Printed Organic Transistors with Submicron Channel Length
Kenjiro Fukuda1,2, Yasunori Takeda1, Yudai Yoshimura3, Tomoko Okamoto3, Yoshinori Katayama3, Daisuek Kumaki1, Shizuo Tokito1
1Graduate School of Science and Engineering, Yamagata University
2Japan Science and Technology Agency (JST), Japan
3DIC Corporation, Japan
Printing technology offers great potential in the manufacturing of large-area thin film electronics with low costs. However, conventional printing methods lack the throughout and patterning resolution required to produce channel lengths for printed electronic devices with a high degree of integration and circuit density, as well as high operating frequencies. Here we report on printed organic thin-film transistor (TFT) devices with submicron (0.6 μm) channel lengths (L), for which the source and drain electrodes are fabricated by employing a scalable reverse-offset printing method with high patterning resolution.
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Thursday, October 22
[Invited Talk] R51 Flexible and Printed Organic TFT Devices and Integrated Circuits for Biosensor Applications
Shizuo Tokito
Abstract
Printable materials and fully printed organic TFT devices have been developed and applied to integrated circuits for use in biosensors. Printed CMOS inverter circuits were produced that demonstrated good response characteristics with a high gain at 10V operation. Three-stage ring oscillator and D-flip flop circuits based on CMOS inverters were also successfully fabricated. In addition, ultra-thin printed OTFT devices fabricated on parylene-C film substrates exhibited excellent bendability and compressibility and were employed in biosensor applications.
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R54 Detection of Mercury (II) Ion in Water using an Extended-gate Type Organic Field Effect Transistor
Functionalized with a Dipicolylamine Derivative
Tsuyoshi Minami, Yui Sasaki, Tsukuru Minamiki, and Shizuo Tokito
Yamagata University, Japan
The electrical detection of mercury (II) ion (Hg2+) in aqueous media was achieved by an organic field effect
transistors (OFET). The fabricated OFET possesses an extended-gate electrode functionalized by an artificial
receptor (i.e. dipicolylamine), which shows a selective response to Hg2+ even in the presence of large excess
amounts of interferent Na+. OFETs could be fabricated on low-cost plastic film substrates using printing
technologies, meaning that OFETs can potentially be applied to practical heavy metal ion sensor devices in the
near future.
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R73 Stacked Complementary Logic Circuits with Low-Voltage Operation using Printed Organic Thin-Film
Transistors
Yasunori Takeda, Kazuaki Kakita, Hidetaka Shima, Yasuhiro Yoneda, Yasuhiro Tanaka, Masashi Mamada,
Kenjiro Fukuda, Daisuke Kumaki, Shizuo Tokito
Yamagata University, Japan
In this study, we fabricated complementary logic inverter circuits with a stacked structure using printed
electrode and semiconductor layers. We have succeeded in modifying and optimizing the electrode surface
conditions for both the p-type and n-type, respectively. Furthermore, by using and in n-type device with a topgate,
bottom-contact structure, we were able to achieve excellent electrical properties. As a result, we have
demonstrated OTFT integrated circuits such as ring oscillators and flip-flop circuits that can be driven at low
voltages.
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R76 Fine Patterning of Inkjet-Printed Silver Nanoparticle Ink and its Application to Organic Thin-Film
Transistors
Daisuke Kumaki, Yoshimasa Goto, Atsushi Harada, Emi Shiga, Kenjiro Fukuda, Shizuo Tokito
Yamagata University, Japan
We have demonstrated the fine patterning of silver electrodes in organic TFT (OTFT) devices using a newly
developed silver (Ag) nanoparticle ink and inkjet printing equipment. The silver nanoparticle ink was optimized
for high-resolution patterning using inkjetprinting. A very stable discharge with no nozzle clogging was observed
by using the developed ink. The patterned silver nanoparticle traces on a Cytop® layer showed line widths of
20 μm and a low resistivities of 7 μΩcm at a sintering temperature of 120℃. By using this Ag nanoparticle ink,
we successfully fabricated an organic transistor with a very short channel length of 10 μm, achieving a fieldeffect
mobility of 0.6 cm2/Vs.
